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Surface Mount NPN Transistor Double Resistor Equipped Nexperia PUMH13 115 for Automotive Applications

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Surface Mount NPN Transistor Double Resistor Equipped Nexperia PUMH13 115 for Automotive Applications

Emitter-Base Voltage VEBO : 5V

Input Resistor : 4.7kΩ

Resistor Ratio : 12

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 0.3W Surface Mount SOT-363

Mfr. Part # : PUMH13,115

Model Number : PUMH13,115

Package : SOT-363

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Product Overview

The Nexperia PEMH13 and PUMH13 are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate two NPN transistors with built-in bias resistors (R1 = 4.7 k, R2 = 47 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Key benefits include a 100 mA output current capability and a simplified circuit design. Typical applications include low current peripheral drivers and control of IC inputs, effectively replacing general-purpose transistors in digital applications.

Product Attributes

Brand: Nexperia (formerly NXP Semiconductors)
Type: NPN/NPN double Resistor-Equipped Transistors (RET)
Certifications: AEC-Q101 qualified
Resistor Values: R1 = 4.7 k, R2 = 47 k

Technical Specifications

Model	Package	Package Configuration	Description	R1 Bias Resistor (Input)	R2/R1 Bias Resistor Ratio	Output Current (IO)	Collector-Emitter Voltage (VCEO)
PEMH13	SOT666	ultra small and flat lead	NPN/PNP complement	3.3 - 6.1 k (Typ 4.7 k)	8 - 12 (Typ 10)	- 100 mA	- 50 V
PUMH13	SOT363 (SC-88)	very small	PNP/PNP complement	3.3 - 6.1 k (Typ 4.7 k)	8 - 12 (Typ 10)	- 100 mA	- 50 V

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Base Voltage (VCBO)	open emitter	-	-	50	V
Collector-Emitter Voltage (VCEO)	open base	-	-	50	V
Emitter-Base Voltage (VEBO)	open collector	-	-	5	V
Input Voltage (VI)	positive	-	-	30	V
Input Voltage (VI)	negative	-	-	-5	V
Output Current (IO)	-	-	-	100	mA
Peak Collector Current (ICM)	single pulse; tp 1 ms	-	-	100	mA
Total Power Dissipation (Ptot)	Tamb 25 C (PEMH13 SOT666)	-	-	200	mW
Total Power Dissipation (Ptot)	Tamb 25 C (PUMH13 SOT363)	-	-	200	mW
Total Power Dissipation (Ptot)	Tamb 25 C (Per device PEMH13 SOT666)	-	-	300	mW
Total Power Dissipation (Ptot)	Tamb 25 C (Per device PUMH13 SOT363)	-	-	300	mW
Junction Temperature (Tj)	-	-	-	150	C
Ambient Temperature (Tamb)	-	-65	-	150	C
Storage Temperature (Tstg)	-	-65	-	150	C
Collector-Base Cut-off Current (ICBO)	VCB = 50 V; IE = 0 A	-	-	100	nA
Collector-Emitter Cut-off Current (ICEO)	VCE = 30 V; IB = 0 A	-	-	1	A
Collector-Emitter Cut-off Current (ICEO)	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
Emitter-Base Cut-off Current (IEBO)	VEB = 5 V; IC = 0 A	-	-	170	A
DC Current Gain (hFE)	VCE = 5 V; IC = 10 mA	100	-	-	-
Collector-Emitter Saturation Voltage (VCEsat)	IC = 5 mA; IB = 0.25 mA	-	-	100	mV
Off-State Input Voltage (VI(off))	VCE = 5 V; IC = 100 A	-	0.6	0.5	V
On-State Input Voltage (VI(on))	VCE = 0.3 V; IC = 5 mA	1.3	0.9	-	V
Collector Capacitance (Cc)	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	2.5	pF
Transition Frequency (fT)	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	230	-	MHz

2410121847_Nexperia-PUMH13-115_C426875.pdf

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